smd type transistors 2SC5026 features low collector-emitter saturation voltage v ce(sat). high collector-emitter voltage (base open) v ceo mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 5v collector current i c 1a peak collector current i cp 1.5 a collector power dissipation p c 1w junction temperature t j 150 storage temperature t stg -55to+150 h fe classification marking rank r s h fe 120 240 170 340 2a electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base voltage v cbo i c =10a,i e =0 80 v collector-emitter voltage v ceo i c =1ma,i b =0 80 v emitter-base voltage v ebo i e =10a,i c =0 5 v collector-base cutoff current i cbo v cb =40v,i b =0 0.1 a forward current transfer ratio h fe v ce =2v,i c = 100 ma 120 340 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.15 0.3 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 0.85 1.2 v transition frequency f t v cb =10v,i e = -50 ma, f = 200 mhz 120 mhz collector output capacitance c ob v cb =10v,i e = 0, f = 1 mhz 10 20 pf smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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